숙명여자대학교 비교과통합관리시스템

Invited Seminar

Department of Mechanical Systems Engineering

III-V semiconductor heteroepitaxy for advanced photonic materials, devices and applications

날짜  2019년11월 14일 목요일

시각 11시 -12시

장소 르네상스플라자 404호

신청 Snoway 비교과 프로그램 (마일리지 2000점)

대상  공개강의 (타과생 환영합니다)

연사  정대환 박사

약력  현재  Senior Scientist, Korea Institute of Science and Technology

        2018 Postdoctoral Researcher, University of California Santa Barbara

        2016 PhD in Electrical Engineering, Yale University

2010  BS in Electrical Engineering and Computer Science, University of Texas at Dallas

III-V materials such as GaN, GaAs and InP are the most common materials for LEDs, lasers, and space solar cells. GaN LEDs have been replacing florescent light bulbs in our houses. GaAs-based VCSELs are the main components in the data center communications and in the iPhone’s face ID technology. Revolution of such materials growth and device design have enabled such disruptive technologies. This seminar will first present some of those crucial III-V photonic materials and devices. Then, I will show my previous works on epitaxial growth of InAs quantum dot lasers on silicon for next-generation telecom applications. The lasers show a very low threshold current, temperature-insensitivity, low reflection-sensitivity and ultra-small foot-print compared to the quantum well counterparts. Especially for this seminar, I will be talking about expected positive effects of a laser performance by leveraging thermal issues arising from high current injection.

* 간단한 다과가 제공됩니다.

* 출석확인증 발급해드립니다.(본인 시간표 가져오세요)