Department of Mechanical Systems Engineering
III-V semiconductor heteroepitaxy for advanced photonic materials, devices and applications
날짜 2019년11월 14일 목요일
시각 11시 -12시
장소 르네상스플라자 404호
신청 Snoway 비교과 프로그램 (마일리지 2000점)
대상 공개강의 (타과생 환영합니다)
연사 정대환 박사
약력 현재 Senior Scientist, Korea Institute of Science and Technology
2018 Postdoctoral Researcher, University of California Santa Barbara
2016 PhD in Electrical Engineering, Yale University
2010 BS in Electrical Engineering and Computer Science, University of Texas at Dallas
III-V materials such as GaN, GaAs and InP are the most common materials for LEDs, lasers, and space solar cells. GaN LEDs have been replacing florescent light bulbs in our houses. GaAs-based VCSELs are the main components in the data center communications and in the iPhone’s face ID technology. Revolution of such materials growth and device design have enabled such disruptive technologies. This seminar will first present some of those crucial III-V photonic materials and devices. Then, I will show my previous works on epitaxial growth of InAs quantum dot lasers on silicon for next-generation telecom applications. The lasers show a very low threshold current, temperature-insensitivity, low reflection-sensitivity and ultra-small foot-print compared to the quantum well counterparts. Especially for this seminar, I will be talking about expected positive effects of a laser performance by leveraging thermal issues arising from high current injection.
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